发明名称 Method for Forming a Device Having Nanopillar and Cap Structures
摘要 A method for forming a device having nanopillar and cap structures on a substrate in which the substrate is first coated with a first resist having a first exposure dose to electron beam radiation, and that after coating the first resist with a second resist having a second exposure dose less than the first resist. Electron beam lithography is then used sequentially to form the nanopillars and cap structures or, alternatively, a template for the nanopillar and cap structures.
申请公布号 US2014116981(A1) 申请公布日期 2014.05.01
申请号 US201213659963 申请日期 2012.10.25
申请人 U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LO;U.S. ARMY RESEARCH LABORATORY ATTN: RDRL-LOC-I 发明人 BURKE ROBERT A.;EDELSTEIN ALAN S.
分类号 G03F7/20;B44C1/22 主分类号 G03F7/20
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