| 摘要 |
PROBLEM TO BE SOLVED: To provide a lead frame for an optical semiconductor device of which the reflection factor is high even for a thin membrane, and in particular, the long-term reliability (thermal resistance) and the adhesion between a reflection layer and a ground layer are improved and further, in which the reflection layer is unlikely to be cracked especially under R/t≤1 of flexure workability required in processing an optical semiconductor device, a manufacturing method thereof and the optical semiconductor device employing the lead frame.SOLUTION: In a lead frame for an optical semiconductor device, on at least one side or both sides of a top face of a conductive substrate 1, a reflection layer 2 is provided partially or entirely which is formed from silver or a silver alloy, and at least one ground layer 4 is provided between the conductive substrate and the reflection layer. The ground layer includes a substrate exposed part 7 where the conductive substrate is partially exposed, and the reflection layer and the conductive substrate are brought into contact in the substrate exposed part. A manufacturing method of the lead frame and the optical semiconductor device with the lead frame are also disclosed. |
