发明名称 |
DEEP ISOLATION TRENCH STRUCTURE AND DEEP TRENCH CAPACITOR ON A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE |
摘要 |
Two trenches having different widths are formed in a semiconductor-on-insulator (SOI) substrate. An oxygen-impermeable layer and a fill material layer are formed in the trenches. The fill material layer and the oxygen-impermeable layer are removed from within a first trench. A thermal oxidation is performed to convert semiconductor materials underneath sidewalls of the first trench into an upper thermal oxide portion and a lower thermal oxide portion, while the remaining oxygen-impermeable layer on sidewalls of a second trench prevents oxidation of the semiconductor materials. After formation of a node dielectric on sidewalls of the second trench, a conductive material is deposited to fill the trenches, thereby forming a conductive trench fill portion and an inner electrode, respectively. The upper and lower thermal oxide portions function as components of dielectric material portions that electrically isolate two device regions. |
申请公布号 |
US2014120688(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
US201414146198 |
申请日期 |
2014.01.02 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BOOTH, JR. ROGER A.;CHENG KANGGUO;ERVIN JOSEPH;PEI CHENGWEN;TODI RAVI M.;WANG GENG |
分类号 |
H01L27/108 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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