| 摘要 |
A method of forming carbon nanotubes on a copper substrate may comprise providing a copper substrate, depositing a titanium metal thin film adhesion layer on the copper substrate, depositing a titanium nitride thin film on the titanium metal thin film, the titanium nitride thin film being between 100 and 200 nanometers in thickness, depositing a catalyst metal on the titanium nitride thin film, the catalyst metal being in the form of discrete particles on the surface of the titanium nitride thin film, and growing carbon nanotubes on the discrete particles of catalyst metal, the carbon nanotubes being grown to an average length of at least 3 microns, wherein the titanium nitride thin film is a diffusion barrier layer preventing alloying of copper with the catalyst metal. To form a silicon battery electrode, the method may further include depositing silicon on the carbon nanotubes over their entire length. |
