发明名称 |
Novel Etching Composition |
摘要 |
This disclosure relates to a method for manufacturing a semiconductor device. The method includes etching a metal film on a semiconductor substrate with an etching composition; and rinsing the etched metal film with a rinse solvent. The etching composition includes at least one acid; at least one compound containing a halide anion, the halide anion being chloride or bromide; at least one compound containing a nitrate or nitrosyl ion; and water. |
申请公布号 |
US2014120734(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
US201414146142 |
申请日期 |
2014.01.02 |
申请人 |
FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.;FUJIFILM CORPORATION |
发明人 |
TAKAHASHI TOMONORI;INABA TADASHI;MIZUTANI ATSUSHI;DU BING;WOJTCZAK WILLIAM A.;TAKAHASHI KAZUTAKA;KAMIMURA TETSUYA |
分类号 |
H01L21/3213;C23F1/30 |
主分类号 |
H01L21/3213 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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