| 摘要 |
Capacitor of a semiconductor device, and a method of fabricating the same, include sequentially forming a mold structure and a polysilicon pattern over a semiconductor substrate, patterning the mold structure using the polysilicon pattern as an etch mask to form lower electrode holes penetrating the mold structure, forming a protection layer covering a surface of the polysilicon pattern, forming lower electrodes in the lower electrode holes provided with the protection layer, removing the polysilicon pattern and the protection layer to expose upper sidewalls of the lower electrodes, removing the mold structure to expose lower sidewalls of the lower electrodes, and sequentially forming a dielectric and an upper electrode covering the lower electrodes. |
