发明名称 Threshold Acquisition and Adaption in NAND Flash Memory
摘要 A method, apparatus, and controller for acquiring and tracking at least one threshold voltage of at least one cell of at least one flash chip. The method can include acquiring the at least one threshold voltage of a particular cell of the at least one flash cell. The method can further include performing at least one threshold voltage adjustment iteration.
申请公布号 US2014119113(A1) 申请公布日期 2014.05.01
申请号 US201213664583 申请日期 2012.10.31
申请人 LSI CORPORATION 发明人 XIA HAITAO;ZHANG FAN;JIN MING;YANG SHAOHUA
分类号 G11C16/06 主分类号 G11C16/06
代理机构 代理人
主权项
地址