| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor Schottky barrier diode which successfully supports forward characteristics and reverse breakdown voltage at the same time.SOLUTION: A nitride semiconductor Schottky barrier diode 101 comprises: an electron transit layer 2 composed of a nitride semiconductor; an electron supply layer 3 which is composed of a nitride semiconductor having a composition different from that of the electron transit layer and formed on the electron transit layer 2; an anode Schottky electrode 5 which forms Schottky junction with a surface of the electron supply layer 3; a cathode ohmic electrode 6 which forms ohmic junction with the surface of the electron supply layer 3; an insulation film 10 which covers the surface of the electron supply layer 3 between the anode Schottky electrode 5 and the cathode ohmic electrode 6; and a gate electrode 7 formed on the insulation film 10. The gate electrode 7 is electrically short-circuited with the anode Schottky electrode 5 to block a channel between the anode Schottky electrode 5 and the cathode ohmic electrode 6 at the time of applying reverse voltage. |
