LATERAL SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a lateral semiconductor device which can improve withstanding voltage by inhibiting leakage current while inhibiting a current collapse phenomenon.SOLUTION: A lateral semiconductor device comprises: a GaN layer 11; an AlGaN layer 12; a source electrode 13 and a drain electrode 14 which are formed on the AlGaN layer 12 and at a distance from each other; a gate electrode 15 formed on the AlGaN layer 12 and between the source electrode 13 and the drain electrode 14; a first insulation film 16 which is formed on the AlGaN layer 12 and in a region between the drain electrode 13 and the gate electrode 15 at a preset distance from the gate electrode 15, for inhibiting current collapse; and a second insulation film 17 formed so as to fill a region between an end of the first insulation film 16 on the gate electrode 15 side and the gate electrode 15.