发明名称 |
METHOD OF FORMING METAL GATE |
摘要 |
Provided is a method of forming a metal gate including the following steps. A dielectric layer is formed on a substrate, wherein a gate trench is formed in the dielectric layer and a gate dielectric layer is formed in the gate trench. A first metal layer is formed in the gate trench by applying a AC bias between a target and the substrate during physical vapor deposition. A second metal layer is formed in the gate trench by applying a DC bias between the target and the substrate during physical vapor deposition. |
申请公布号 |
US2014120711(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
US201213661998 |
申请日期 |
2012.10.26 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
TSAI MIN-CHUAN;HUANG HSIN-FU;HSU CHI-MAO;CHENG TSUN-MIN;CHEN CHIEN-HAO;CHEN WEI-YU;SUN CHI-YUAN |
分类号 |
H01L21/283 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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