| 摘要 |
PROBLEM TO BE SOLVED: To provide an infrared sensor with an element structure capable of suppressing the loss of incident infrared light in an element after resin packaging, and a manufacturing method thereof.SOLUTION: The infrared sensor comprises a semiconductor substrate 10, and a semiconductor lamination part 20 having a photodiode structure of PN junction or PIN junction on the semiconductor substrate 10, and the semiconductor lamination part 20 contains InSb in a composition forming a semiconductor laminate. A protection film 40 of an element is formed so as to follow unevenness of a mesa structure, and package-sealed from the upper side thereof with a mold resin 50 and in a recessed portion of the mesa structure, a cavity 41 which is a recess structure is included between the protection film 40 and the mold resin 50. Air is present in the cavity 41, such that infrared light is easily reflected between the protection film 40 and air, and the loss of incident infrared light can be suppressed. |
