| 摘要 |
A heterojunction transistor including a semiconductor body is provided. The semiconductor body includes: a base region of a semiconductor material having a first band-gap, the base region being of a first conductivity type; a collector region of a semiconductor material having a second band-gap which is larger than the first band-gap by at least about 1 eV, the collector region being of a second conductivity type and forming a first heterojunction with the base region; and an emitter region of a semiconductor material having a third band-gap which is larger than the first band-gap by at least about 1 eV, the emitter region being of the second conductivity type and forming a second heterojunction with the base region. Further, a method for producing a heterojunction transistor is provided. |
