发明名称 COPPER HILLOCK PREVENTION WITH HYDROGEN PLASMA TREATMENT IN A DEDICATED CHAMBER
摘要 A copper layer is formed without copper hillocks. Embodiments includes providing a copper layer above a substrate, planarizing the copper layer, performing hydrogen (H2) plasma treatment on the copper layer in a first chamber, and forming a barrier layer over the copper layer in a second chamber, different from the first chamber.
申请公布号 US2014117545(A1) 申请公布日期 2014.05.01
申请号 US201213661882 申请日期 2012.10.26
申请人 LIU HUANG;RAO XUESONG;ZOU ZHENG;SEE ALEX;LEONG LUP SAN;LI LIANG;SEET CHIM SENG;GLOBALFOUNDRIES SINGAPORE PTE. LTD 发明人 LIU HUANG;RAO XUESONG;ZOU ZHENG;SEE ALEX;LEONG LUP SAN;LI LIANG;SEET CHIM SENG
分类号 H01L21/768;H01L23/48 主分类号 H01L21/768
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