发明名称 |
STACKED DUAL-CHIP PACKAGING STRUCTURE AND PREPARATION METHOD THEREOF |
摘要 |
The invention relates to a power semiconductor device and a preparation method, particularly relates to preparation of stacked dual-chip packaging structure of MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) using flip chip technology with two interconnecting plates. The first chip is flipped and attached on the base such that the first chip is overlapped with the third pin; the back metal layer of the first chip is connected to the bonding strip of the first pin through a first interconnecting plate; the second chip is flipped and attached on a main plate portion of the first interconnecting plate such that the second chip is overlapped with the fourth pin; and the back metal layer of the second chip is connected to the bonding strip of the second pin through the second interconnecting plate. |
申请公布号 |
US2014117523(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
US201213663694 |
申请日期 |
2012.10.30 |
申请人 |
HO YUEH-SE;XUE YAN XUN;YILMAZ HAMZA;LU JUN |
发明人 |
HO YUEH-SE;XUE YAN XUN;YILMAZ HAMZA;LU JUN |
分类号 |
H01L23/495;H01L21/60 |
主分类号 |
H01L23/495 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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