FIN FIELD EFFECT TRANSISTORS HAVING A NITRIDE CONTAINING SPACER TO REDUCE LATERAL GROWTH OF EPITAXIALLY DEPOSITED SEMICONDUCTOR MATERIALS

摘要

A fin field effect transistor including a plurality of fin structures on a substrate, and a shared gate structure on a channel portion of the plurality of fin structures. The fin field effect transistor further includes an epitaxial semiconductor material having a first portion between adjacent fin structures in the plurality of fin structures and a second portion present on outermost sidewalls of end fin structures of the plurality of fin structures. The epitaxial semiconductor material provides a source region and at drain region to each fin structure of the plurality of fin structures. A nitride containing spacer is present on the outermost sidewalls of the second portion of the epitaxial semiconductor material.