| 摘要 |
<p>A thin-film transistor (100) and an active-matrix flat panel display device (200). The thin-film transistor (100) comprises a gate electrode (101), a first insulation layer (102), a source electrode (103), a drain electrode (104), and multiple oxide semiconductor layers (105). The multiple oxide semiconductor layers (105) are sequentially and stackingly arranged between the source electrode (103) or the drain electrode (104) and the first insulation layer (102), and comprises a first oxide semiconductor layer (151) arranged adjacent to the first insulation layer (102) and a second oxide semiconductor layer (152) electrically connected to the source electrode (103) and to the drain electrode (104). The electrical resistivity of the first oxide semiconductor layer (151) is greater than 104Ω.cm; the electrical resistivity of the second oxide semiconductor layer (152) is less than 1Ω.cm. This scheme ensures that the electrical properties of the thin-film transistor (100) are normal, thus ensuring the display quality of the active-matrix flat panel display device (200).</p> |
