包含介于通道与汲极区之间之掺杂区之电子装置及其形成方法,申请号TW100102953-传众专利搜索

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发明名称	包含介于通道与汲极区之间之掺杂区之电子装置及其形成方法
摘要
申请公布号	TWI436482	申请公布日期	2014.05.01
申请号	TW100102953	申请日期	2011.01.26
申请人	半导体组件工业公司美国	发明人	罗却特　盖瑞Ｈ;葛利夫纳　高登Ｍ
分类号	H01L29/78;H01L21/336;H01L21/22	主分类号	H01L29/78
代理机构		代理人	陈长文台北市松山区敦化北路201号7楼
主权项
地址	美国

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