SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which effectively inhibits leakage current while inhibiting decrease in withstanding voltage.SOLUTION: A semiconductor device comprises: an electron transit layer which is formed on a substrate and is composed of a group III nitride-base compound semiconductor; an electron supply layer which is formed on the electron transit layer and which is composed of a group III nitride-based compound semiconductor having band-gap energy higher than that of the electron transit layer; a field plate layer which is formed on the electron supply layer and which is composed of non-p-type group III nitride-based compound semiconductor having band-gap energy lower than that of the electron supply layer; a first electrode formed to form ohmic contact with a two-dimensional electron gas layer occurring at a boundary surface of the electron transit layer with the electron supply layer; and a second electrode formed to form Schottky contact with the two-dimensional electron gas layer. The second electrode forms ohmic contact with a two-dimensional hole gas occurring at a boundary surface of the field plate layer with the electron supply layer at a side wall of the field plate layer.