| 发明名称 |
METHOD OF THIN SILICON DEPOSITION FOR ENHANCEMENT OF ON CURRENT AND SURFACE CHARACTERISTICS OF SEMICONDUCTOR DEVICE |
| 摘要 |
A method of fabricating a semiconductor device is provided. A fin portion protruding from a substrate is formed. A sacrificial layer is formed to cover top and side surfaces of the fin portion. A gate dielectric is formed on the fin portion by oxidizing the sacrificial layer. |
| 申请公布号 |
US2014120691(A1) |
申请公布日期 |
2014.05.01 |
| 申请号 |
US201314049435 |
申请日期 |
2013.10.09 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SANGHYUN;LEE SUNGSAM;LEE DONGKAK |
| 分类号 |
H01L21/76 |
主分类号 |
H01L21/76 |
| 代理机构 |
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代理人 |
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