CAPACITOR AND SEMICONDUCTOR DEVICE USING SAME

摘要

A capacitor for a semiconductor device includes a bottom electrode plate, an insulating layer formed on the bottom electrode plate, and a top electrode plate formed on the insulating layer. The bottom plate includes a capacitor well and at least one diffused region formed on the capacitor well. A doping concentration of the at least one diffused region is higher than a doping concentration of the capacitor well, the capacitor well comprising a first well.