Self-Aligned Silicide Bottom Plate for EDRAM Applications by Self-Diffusing Metal in CVD/ALD Metal Process

摘要

In one aspect, a memory cell capacitor is provided. The memory cell capacitor includes a silicon wafer; at least one trench in the silicon wafer; a silicide within the trench that serves as a bottom electrode of the memory cell capacitor, wherein a contact resistance between the bottom electrode and the silicon wafer is from about 1×10−6 ohm-cm2 to about 1×10−9 ohm-cm2; a dielectric in the trench covering the bottom electrode; and a top electrode in the trench separated from the bottom electrode by the dielectric.