发明名称 |
Metal-Oxide-Semiconductor Field-Effect Transistor with Spacer over Gate |
摘要 |
A metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a source and a drain in the substrate, a gate electrode disposed over the substrate between the source and drain. An inner spacer is disposed at least partially over the gate electrode. An outer spacer is disposed adjacent to a sidewall of the gate electrode. |
申请公布号 |
US2014117467(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
US201213660728 |
申请日期 |
2012.10.25 |
申请人 |
MANUFACTURING COMPANY, LTD. TAIWAN SEMICONDUCTOR;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
YANG CHUNG-YUAN;WANG JEN-PAN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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