发明名称 SEMICONDUCTOR DEVICE WITH IMPURITY REGION WITH INCREASED CONTACT AREA
摘要 A semiconductor device includes a semiconductor substrate, an impurity region in the semiconductor substrate, and a conductive layer contacting a top surface of the impurity region and at least a side surface of the impurity region.
申请公布号 US2014117440(A1) 申请公布日期 2014.05.01
申请号 US201414149348 申请日期 2014.01.07
申请人 ELPIDA MEMORY, INC. 发明人 TANIGUCHI KOJI
分类号 H01L29/417 主分类号 H01L29/417
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