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摘要

A method of processing a wafer uses Ion Energy (IE)-related multilayer process sequences and Ion Energy Controlled Multi-lnput/Multi- Output (lECMIMO) models and libraries that can include one or more measurement procedures, one or more lEC-etch sequences, and one or more Ion Energy Optimized (IEO) etch procedures. The IEC-MIMO process control uses dynamically interacting behavioral modeling between multiple layers and/or multiple lEC etch sequences. The multiple layers and/or the multiple lEC etch sequence can be associated with the creation of lines, trenches, vias, spacers, contacts, and gate structures that can be created using IEO etch procedures.