| 摘要 |
The present invention relates to a semiconductor device, a method for manufacturing the semiconductor device, and an electronic thermoelectric power generation device, and yields a semiconductor device provided with a thermoelectric conversion element embedded in a semiconductor chip and integrated with a semiconductor circuit. The thermoelectric conversion element is buried in a penetrating recessed section that acts as a thermoelectric-conversion-element-forming region provided in a semiconductor substrate, and is formed of a plurality of penetrating rods comprising a thermoelectric converting material, and an insulated reinforcing layer in which the penetrating rods are embedded and which has a lower thermal conductivity than the thermoelectric converting material. |
