| 摘要 |
PROBLEM TO BE SOLVED: To provide stabilized electrical characteristics with a transistor using an oxide semiconductor layer, and provide a semiconductor device with high reliability having the transistor.SOLUTION: A semiconductor device comprises: a multilayer film containing an oxide layer and an oxide semiconductor layer; a gate insulation film provided in contact with the multilayer film; and a gate electrode overlaid on the multilayer film via the gate insulation film. The oxide semiconductor layer contains indium, and is provided in contact with the oxide layer. The oxide layer has an energy gap being higher than that of the oxide semiconductor layer, and contains indium. |
