SILICON EPITAXIAL WAFER AND MANUFACTURING METHOD OF SOLID STATE IMAGING ELEMENT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon epitaxial wafer which has gettering capability in order to prevent dark current and a white spot at the time of forming a solid state imaging element, and which reduces crystal defects; and provide a manufacturing method of a solid state imaging element using the silicon epitaxial wafer.SOLUTION: In a silicon epitaxial wafer where an epitaxial layer is formed on a silicon single crystal substrate 10, a concentration of carbon which forms a solid solution in the epitaxial layer is set at not less than 5×10atoms/cmand not more than 5×10atoms/cm.