| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a polymerization method of a polymer for a semiconductor, in which generation of a component having an extremely high molecular weight that easily causes a defect is suppressed as much as possible in a polymerization method of a polymer using a lactone skeleton-containing (meth)acrylic compound as a monomer, and to provide a polymer for a semiconductor resist obtained by the method.SOLUTION: The polymerization method of a polymer for a semiconductor resist is carried out by using a (meth)acrylic monomer (A) having a lactone skeleton and a monomer (B) having no lactone skeleton, as raw material monomers. In the method, polymerization is carried out while adding a monomer solution (i) containing the above monomer (A) and the above monomer (B) to a reaction system for 30 minutes or more; and after 30 minutes or more have passed from the initiation of the polymerization, polymerization is carried out by further adding a monomer solution (ii) containing the monomer (A) to the reaction system.</p> |
