发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To suppress variation in semiconductor characteristics of a semiconductor device using an oxide semiconductor by preventing impurities such as moisture and oxygen from being mixed into the oxide semiconductor, or to provide a semiconductor device excellent in reliability.SOLUTION: The semiconductor device comprises: a gate insulating film provided on a substrate having an insulating surface; a source electrode and a drain electrode which are provided on the gate insulating film; a first oxide semiconductor layer provided on the source electrode and the drain electrode; and a source region and a drain region which are provided between the first oxide semiconductor layer and both the source electrode and the drain electrode. A barrier film is provided in contact with the first oxide semiconductor layer.</p> |
申请公布号 |
JP2014078721(A) |
申请公布日期 |
2014.05.01 |
申请号 |
JP20130234670 |
申请日期 |
2013.11.13 |
申请人 |
SEMICONDUCTOR ENERGY LAB CO LTD |
发明人 |
AKIMOTO KENGO ; YAMAZAKI SHUNPEI |
分类号 |
H01L29/786;G02F1/1368;H01L21/28;H01L21/336;H01L51/50;H05B33/14 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|