发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device includes the steps of immersing a substrate in a solution containing metal ions to adhere a metal catalyst to a surface of the substrate, immersing the substrate with the metal catalyst adhered thereto in an electroless plating solution to electrolessly plate a layer on the substrate, immersing the substrate in an electroplating solution to electroplate a layer on the electrolessly plated layer using the electrolessly plated layer as a power feeding layer, and forming a metal layer of Cu or Ag on the electroplated layer. The electroplated layer is formed of a different material than the metal layer. |
申请公布号 |
US2014117549(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
US201314010627 |
申请日期 |
2013.08.27 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
TSUNAMI DAISUKE;NISHIZAWA KOICHIRO |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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