发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE
摘要 A method of manufacturing a semiconductor device includes the steps of immersing a substrate in a solution containing metal ions to adhere a metal catalyst to a surface of the substrate, immersing the substrate with the metal catalyst adhered thereto in an electroless plating solution to electrolessly plate a layer on the substrate, immersing the substrate in an electroplating solution to electroplate a layer on the electrolessly plated layer using the electrolessly plated layer as a power feeding layer, and forming a metal layer of Cu or Ag on the electroplated layer. The electroplated layer is formed of a different material than the metal layer.
申请公布号 US2014117549(A1) 申请公布日期 2014.05.01
申请号 US201314010627 申请日期 2013.08.27
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 TSUNAMI DAISUKE;NISHIZAWA KOICHIRO
分类号 H01L21/768 主分类号 H01L21/768
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