发明名称 DIFFERENTIAL MOSCAP DEVICE
摘要 A differential MOS capacitor structure includes two capacitor sections coupled to different gates and operating using different signals. The respective signals may be 180° out of phase. The capacitor sections of the differential capacitor each include two or more upper capacitor plates disposed over a single common lower capacitor plate which serves as a common node thereby preventing parasitic capacitance. The upper capacitor plates of a first capacitor section are adjacent one another with no electrical components disposed between them. The upper capacitor plates of a second capacitor section are adjacent one another with no electrical components disposed between them. The upper capacitor plates are formed of a plurality of stacked conductive layers in some embodiments.
申请公布号 US2014117501(A1) 申请公布日期 2014.05.01
申请号 US201213660172 申请日期 2012.10.25
申请人 TAIWA SEMICONDUCTOR MANUFACTURING CO., LTD.;TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 YEN HSIAO-TSUNG;LIN YU-LING;KUO CHIN-WEI;JENG MIN-CHIE
分类号 H01L29/94 主分类号 H01L29/94
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