发明名称 METHODS FOR DEPOSITING FLUORINE/CARBON-FREE CONFORMAL TUNGSTEN
摘要 Provided are atomic layer deposition methods to deposit a tungsten film or tungsten- containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCI5 or WCI6.
申请公布号 WO2014066792(A1) 申请公布日期 2014.05.01
申请号 WO2013US66866 申请日期 2013.10.25
申请人 APPLIED MATERIALS, INC.;FU, XINYU;GANDIKOTA, SRINIVAS;GELATOS, AVGERINOS V.;NOORI, ATIF;CHANG, MEI;THOMPSON, DAVID;GHANAYEM, STEVE G. 发明人 FU, XINYU;GANDIKOTA, SRINIVAS;GELATOS, AVGERINOS V.;NOORI, ATIF;CHANG, MEI;THOMPSON, DAVID;GHANAYEM, STEVE G.
分类号 H01L21/205 主分类号 H01L21/205
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