| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit process abnormality and variation which are caused by a level difference of a substrate by absorbing the level difference with respect to the substrate having the level difference on a principal surface.SOLUTION: A semiconductor device manufacturing method comprises: a process (S101) of preparing a semiconductor substrate having irregularity on one principal surface; and a process (S102) of filling the irregularity with a protective paste by screen printing the protective paste on the principal surface. The filling process (S102) includes a process of supplying the protective paste to the principal surface via a printing mask having an opening. The printing mask is formed such that a height of a side wall of the opening becomes larger than a thickness of a region other than the opening. |
