发明名称 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles.
申请公布号 US2014117548(A1) 申请公布日期 2014.05.01
申请号 US201313950442 申请日期 2013.07.25
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 KATAGIRI MASAYUKI;YAMAZAKI YUICHI;SAKAI TADASHI;SAKUMA NAOSHI;SUZUKI MARIKO
分类号 H01L23/532;H01L21/768;H01L23/522 主分类号 H01L23/532
代理机构 代理人
主权项
地址