发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A semiconductor device of an embodiment includes: a substrate on which a semiconductor circuit is formed; an interlayer insulating film in which a contact hole is formed on the substrate; a catalyst metal film on a side wall of the contact hole; catalyst metal particles on a bottom of the contact hole; graphene on the catalyst metal film; and carbon nanotubes, which penetrates the contact hole, on the catalyst metal particles. |
申请公布号 |
US2014117548(A1) |
申请公布日期 |
2014.05.01 |
申请号 |
US201313950442 |
申请日期 |
2013.07.25 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KATAGIRI MASAYUKI;YAMAZAKI YUICHI;SAKAI TADASHI;SAKUMA NAOSHI;SUZUKI MARIKO |
分类号 |
H01L23/532;H01L21/768;H01L23/522 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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