| 发明名称 |
SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE |
| 摘要 |
<p>A source electrode pad (32) and a gate electrode pad (33) are formed on a surface of a GaN transistor (3). A surface source electrode pad (42a) and a drain electrode pad (41) are formed on a surface of a MOS transistor (4). The source electrode pad (32) and the drain electrode pad (41) are connected, and the gate electrode pad (33) and the surface source electrode pad (42a) are connected.</p> |
| 申请公布号 |
WO2014065124(A1) |
申请公布日期 |
2014.05.01 |
| 申请号 |
WO2013JP77518 |
申请日期 |
2013.10.09 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
INOSHIRI, RYOH;ISHIHARA, SEIJI;OGINO, EIJI |
| 分类号 |
H01L25/04;H01L21/52;H01L25/18 |
主分类号 |
H01L25/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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