| 摘要 |
A semiconductor switch device having an improved distortion characteristic and a method of manufacturing the semiconductor switch device are provided. The semiconductor switch device (1) includes semiconductor elements (E1, D1) formed on a single semiconductor substrate (2) with the provision of recesses (3A, 3B) for the semiconductor elements. The semiconductor element (D1) constitutes a switch circuit. The semiconductor elements (E1, D1) constitute a logic circuit. The semiconductor elements (E1, D1) include respectively gate electrodes (4A, 4B), drain electrodes (6A, 6B), and source electrodes (5A, 5B). The gate electrode (4B) has a rectangular external shape in section. The gate electrode (4A) has a V-like external shape in section. |
