| 摘要 |
<p>Method for writing and reading a plurality of data bits to a magnetic random access memory (MRAM) cell (1) comprising a magnetic tunnel junction (2) including a reference magnetic layer (21) having a reference magnetization (210), a tunnel barrier layer (22), and a SAF storage magnetic layer (23) including a first and second storage magnetization (233, 234) being coupled antiparallel through a storage coupling layer (232) and freely orientable at a high temperature threshold; the method comprising: heating the magnetic tunnel junction (2) to the high temperature threshold; and applying a write magnetic field (42) to orient the first and second storage magnetization (233, 234); wherein said high temperature threshold comprises one of a first or third high temperature threshold (T 1 , T 3 ) such as to orient the first storage magnetization (233) respectively antiparallel or parallel to the second storage magnetization (234); and a second high temperature threshold (T 2 ) such as to orient the first storage magnetization (233) with an angle below 180° with respect to the second storage magnetization (234).</p> |
