发明名称 WASHING LIQUID FOR PHOTOLITHOGRAPHY, AND METHOD FOR WASHING EXPOSURE DEVICE USING THE SAME
摘要 <p>Problem: To provide a cleaning liquid for lithography and a cleaning method using it for photoexposure devices. In a process of liquid immersion lithography, the cleaning liquid may efficiently clean the photoexposure device site (especially optical lens member) contaminated with the component released from photoresist and remove the contaminant, and in addition, the waste treatment for the cleaning liquid is easy, the efficiency in substitution with the cleaning liquid for the medium for liquid immersion lithography is high, and the cleaning liquid does not detract from the throughput in semiconductor production. Means for Solution; A cleaning liquid for photolithography to be used for cleaning a photoexposure device in a process of liquid immersion lithography that comprises filling the space between the optical lens member of a photoexposure device and an object for photoexposure mounted on the wafer stage, with a medium for liquid immersion lithography, the cleaning liquid comprising (a) a surfactant. (b) a hydrocarbon solvent, and (c) water; and a cleaning method using it for photoexposure devices.</p>
申请公布号 EP1962327(A4) 申请公布日期 2014.04.30
申请号 EP20060823501 申请日期 2006.11.22
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 KOSHIYAMA, JUN;SAWADA, YOSHIHIRO;YOKOYA, JIRO;HIRANO, TOMOYUKI
分类号 G03F7/20;C11D1/66;C11D1/72;C11D3/18;C11D3/43;H01L21/027;H01L21/304 主分类号 G03F7/20
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