发明名称 CROSS-COUPLED TRANSISTOR LAYOUTS IN RESTRICTED GATE LEVEL LAYOUT ARCHITECTURE
摘要 A FIRST P CHANNEL TRANSISTOR (401) AND A FIRST N CHANNEL TRANSISTOR (407) ARE DEFINED BY FIRST AND SECOND GATE ELECTRODES, RESPECTIVELY. THE SECOND GATE ELECTRODE IS ELECTRICALLY CONNECTED TO THE FIRST GATE ELECTRODE. A SECOND P CHANNEL TRANSISTOR (403) AND A SECOND N CHANNEL TRANSISTOR (405) ARE DEFINED BY THIRD AND FOURTH GATE ELECTRODES, RESPECTIVELY. THE FOURTH GATE ELECTRODE IS ELECTRICALLY CONNECTED TO THE THIRD GATE ELECTRODE. EACH OF THE FIRST P CHANNEL TRANSISTOR, FIRST N CHANNEL TRANSISTOR, SECOND P CHANNEL TRANSISTOR, AND SECOND N CHANNEL TRANSISTOR HAS A RESPECTIVE DIFFUSION TERMINAL ELECTRICALLY CONNECTED TO A COMMON NODE (495). EACH OF THE FIRST, SECOND, THIRD, AND FOURTH GATE ELECTRODES (401A, 407A, 403A, 405A) IS DEFINED TO EXTEND ALONG ANY OF A NUMBER OF PARALLEL ORIENTED GATE ELECTRODE TRACKS WITHOUT PHYSICALLY CONTACTING A GATE LEVEL FEATURE DEFINED WITHIN ANY GATE LEVEL FEATURE LAYOUT CHANNEL ASSOCIATED WITH A GATE ELECTRODE TRACK ADJACENT THERETO.
申请公布号 MY151273(A) 申请公布日期 2014.04.30
申请号 MY2010PI04288 申请日期 2009.03.12
申请人 TELA INNOVATIONS, INC. 发明人 SCOTT T. BECKER
分类号 H01L27/08 主分类号 H01L27/08
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