发明名称 POSITIVE TONE BI-LAYER IMPRINT LITHOGRAPHY METHOD
摘要 <p>THE PRESENT INVENTION PROVIDES A METHOD TO PATTERN A SUBSTRATE WHICH FEATURES CREATING A MULTI-LAYERED STRUCTURE BY FORMING, ON THE SUBSTRATE, A PATTERNED LAYER HAVING PROTRUSIONS AND RECESSIONS. FORMED UPON THE PATTERNED LAYER IS A CONFORMAL LAYER, WITH THE MULTI-LAYERED STRUCTURE HAVING A CROWN SURFACE FACING AWAY FROM THE SUBSTRATE. PORTIONS OF THE MULTI-LAYERED STRUCTURE ARE REMOVED TO EXPOSE REGIONS OF THE SUBSTRATE IN SUPERIMPOSITION WITH THE PROTRUSIONS, WHILE FORMING A HARD MASK IN AREAS OF THE CROWN SURFACE IN SUPERIMPOSITION WITH THE RECESSIONS.</p>
申请公布号 MY151241(A) 申请公布日期 2014.04.30
申请号 MY2011PI05734 申请日期 2004.03.25
申请人 MOLECULAR IMPRINTS, INC. 发明人 SIDLGATA V. SREENIVASAN;FRANK Y. XU;MICHAEL N. MILLER;MICHAEL P.C. WATTS
分类号 H01L51/40;G03F;G03F7/00;G03F7/09 主分类号 H01L51/40
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