发明名称 Local differentiable evaporation of substrates e.g. high-melting material by a transfer mask, by vaporizing an evaporation material by locally applying an energy into the mask using radiation that is reflected on mask opposite substrates
摘要 <p>The vapor deposition method comprises vaporizing an evaporation material by locally applying an energy into a transfer mask (1) using radiation that is reflected locally on the transfer mask opposite substrates (20). The radiation from a radiation source (22) is concentrated via a concentrator on a transfer mask surface, which is smaller than a radiating surface of the radiation source. One of an absorber layer (6) and a reflector layer is structured above a continuous cover layer and a continuous evaporation layer of the evaporation material. The vapor deposition method comprises vaporizing an evaporation material by locally applying an energy into a transfer mask (1) using radiation that is reflected locally on the transfer mask opposite substrates (20). The radiation from a radiation source (22) is concentrated via a concentrator on a transfer mask surface, which is smaller than a radiating surface of the radiation source. One of an absorber layer (6) and a reflector layer is structured above a continuous cover layer and a continuous evaporation layer of the evaporation material. The energy input to the transfer mask is performed by a radiation source comprising an array of flash or continuous wave lamps and a curved reflector and concentrated by a convergent lens. The first divergent radiation from one of each lamp associated the curved reflector is directed as a uniform radiation on the concentrator. An energy density of the transfer mask and/or a size of an illuminated area of the transfer mask is varied by the concentrator. The energy input to the transfer mask is carried out by absorption in the absorber layer. An independent claim is included for a vapor deposition apparatus for locally differentiable evaporation of substrates from a transfer mask on a transparent intermediate carrier, an absorber layer and a reflector layer.</p>
申请公布号 DE102012110343(A1) 申请公布日期 2014.04.30
申请号 DE201210110343 申请日期 2012.10.29
申请人 VON ARDENNE ANLAGENTECHNIK GMBH 发明人 BURGHART, MARKUS;HAASEMANN, GEORG
分类号 C23C14/04;C23C14/28 主分类号 C23C14/04
代理机构 代理人
主权项
地址