发明名称 |
SILICON CARBIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING SAME |
摘要 |
<p>This silicon carbide semiconductor element includes: a body region of a second conductivity type which is located on a drift layer of a first conductivity type; an impurity region of the first conductivity type which is located on the body region; a trench which runs through the body region and the impurity region to reach the drift layer; a gate insulating film which is arranged on surfaces of the trench; and a gate electrode which is arranged on the gate insulating film. The surfaces of the trench include a first side surface and a second side surface which is opposed to the first side surface. The concentration of a dopant of the second conductivity type is higher at least locally in a portion of the body region which is located beside the first side surface than in another portion of the body region which is located beside the second side surface.</p> |
申请公布号 |
EP2725622(A1) |
申请公布日期 |
2014.04.30 |
申请号 |
EP20120804737 |
申请日期 |
2012.06.25 |
申请人 |
PANASONIC CORPORATION |
发明人 |
TAKAHASHI, KUNIMASA;NIWAYAMA, MASAHIKO;UCHIDA, MASAO;KUDOU, CHIAKI |
分类号 |
H01L29/78;H01L21/336;H01L29/10;H01L29/12 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|