| 摘要 |
1,014,518. Semi-conductor devices. INTERMETALL GESELLSCHAFT FUR METALLURGIE UND ELEKTRONIK. Jan. 23, 1963 [Feb. 5, 1962], No. 2820/63. Heading H1K. Alloyed electrodes on a semi-conductor body are provided by applying the electrode material to the body, covering this and the body with a layer of insulating material containing silicon oxide and then alloying the material into the body; the insulating material thus limits the area of the alloying surface. The material may be arranged to peel off the electrode after the alloying process to allow for connections. The insulating layer may consist of a mixture of of SiO and Al 2 O or of SiO and B 2 O 3 , or of pure SiO 2 obtained by vaporization or cathodic atomization of Si in oxygen. The semiconductor material may be germanium and the process is suitable for transistors. |
