| 摘要 |
An embodiment of the present invention relates to a light emitting device, a method for manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device according to an embodiment may comprise: a first conductive semiconductor layer (112); a gallium nitride-based super lattice layer (124) on the first conductive semiconductor layer (112); an active layer (114) on the gallium nitride-based super lattice layer (124); a second conductive gallium nitride-based layer on the active layer (114); and a second conductive semiconductor layer (116) on the second conductive gallium nitride-based layer, wherein the second conductive gallium nitride-based layer can include a second conductive Al_xGa_(1-x)N/Al_yGa_(1-y)N super lattice layer (here, 0<x<1, 0<y<1) (128) on the active layer (114). |
