发明名称 |
CLEANING COMPOSITION AND PROCESS FOR PRODUCING A SEMICONDUCTOR DEVICE |
摘要 |
A cleaning composition of a semiconductor device for laminating an organosiloxane-based thin film and a photoresist layer in this order on a substrate having a low dielectric interlayer insulation film and a copper wiring or a copper alloy wiring, then applying selective exposure and development treatments to the subject photoresist layer to form a photoresist pattern, subsequently applying a dry etching treatment to the organosiloxane-based thin film and the low dielectric interlayer insulation film while using this resist pattern as a mask and then removing the organosiloxane-based thin film, a residue generated by the dry etching treatment, a modified photoresist having been modified by the dry etching treatment and an unmodified photoresist layer located in a lower layer than the modified photoresist, the cleaning composition containing from 15 to 20 % by mass of hydrogen peroxide, from 0.0001 to 0.003 % by mass of an amino polymethylene phosphonic acid, from 0.02 to 0.5 % by mass of potassium hydroxide and water and having a pH of from 7.5 to 8.5, is provided. Also, a method for manufacturing a semiconductor device using the subject cleaning composition is provided. |
申请公布号 |
EP2128707(B1) |
申请公布日期 |
2014.04.30 |
申请号 |
EP20080721448 |
申请日期 |
2008.03.06 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC. |
发明人 |
MATSUNAGA, HIROSHI;OHTO, MASARU;KASHIWAGI, HIDEO;YOSHIDA, HIROSHI |
分类号 |
H01L21/311;G03F7/42;H01L21/02 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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