发明名称 |
Method for applying aluminum oxide layer on semiconductor substrate for photovoltaic solar cell, involves creating plasma zone between supply point of aluminum-containing gas and suction location of gases in process chamber |
摘要 |
<p>The method involves providing a semiconductor substrate (3). The semiconductor substrate is inserted into a process chamber (1) and an aluminum oxide layer is deposited by plasma enhanced chemical vapor deposition to form plasma in a plasma zone by supplying the aluminum-containing gas. The suction of the gases from the process chamber is enabled during the chemical vapor deposition. The plasma zone is created with respect to the aluminum-containing gas flow between the supply point of the aluminum-containing gas and suction location of the gases in the process chamber. An independent claim is included for device for applying aluminum oxide layer on semiconductor substrate.</p> |
申请公布号 |
DE102012219667(A1) |
申请公布日期 |
2014.04.30 |
申请号 |
DE201210219667 |
申请日期 |
2012.10.26 |
申请人 |
FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V. |
发明人 |
SAINT-CAST, PIERRE;HOFMANN, MARC;RENTSCH, JOCHEN;PREU, RALF |
分类号 |
C23C16/30;H01L31/18 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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