Method and device for plasma-aided chemical vapour deposition

摘要

Plasma-enhanced vapor deposition coating method comprises evacuating the area around the substrate and feeding in a process gas containing a starting material for the coating. Microwave or HF pulses are then applied. The gap between the pulse sequences is at least 3, preferably at least 5 times longer than that between the first two pulses in a sequence. An independent claim is included for apparatus for carrying out the process with a microwave or HF source which can be controlled to provide pulse sequences as described.