| 摘要 |
An object of the present invention is to provide a polishing pad which hardly generates scratches on the surface of an object to be polished, and has improved dressability. Another object of the present invention is to provide a method for manufacturing a semiconductor device using the polishing pad. A polishing pad of the present invention includes a polishing layer made of a fine cell-containing polyurethane resin foam, wherein the polyurethane resin foam contains a polyurethane resin having an Asker D hardness of 20 to 60 degrees and an abrasion parameter, which is expressed by the following equation, of 1 to 3. Abrasion parameter={1/(Tensile breaking strength [MPa]×Tensile breaking elongation [%]/100)}×100 |
