| 摘要 |
<p>It is intended to provide a semiconductor ceramic composition capable of shifting the Curie temperature to a positive direction as well as of obtaining an excellent jump characteristic while suppressing an increase in room temperature resistivity to a minimum value. There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO 3 is substituted by Bi-Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder of a BT calcined powder containing (BaR)TiO 3 or Ba(TiM)O 3 (wherein each of R and M is a semiconductive dopant), wherein a part of BaCO 3 and TiO 2 are remained therein; and a BNT calcined powder containing a (BiNa)TiO 3 powder.</p> |
