发明名称 |
Nonvolatile semiconductor storage device having conductive and insulative charge storage films |
摘要 |
According to an aspect of the present invention, there is provided a nonvolatile semiconductor storage device including: a semiconductor substrate; a source region and a drain region that are formed in the semiconductor substrate so as to be separated from each other and so as to define a channel region therebetween; a tunnel insulating film that is formed on the channel region; an insulative charge storage film that is formed on the tunnel insulating film; a conductive charge storage film that is formed on the insulative charge storage film so as to be shorter than the insulative charge storage film in a channel direction; an interlayer insulating film that is formed on the conductive charge storage film; and a gate electrode that is formed on the interlayer insulating film. |
申请公布号 |
US8710572(B2) |
申请公布日期 |
2014.04.29 |
申请号 |
US20080339993 |
申请日期 |
2008.12.19 |
申请人 |
ISHIHARA TAKAMITSU;MURAOKA KOICHI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
ISHIHARA TAKAMITSU;MURAOKA KOICHI |
分类号 |
H01L29/423 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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